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NTD5867NLT4G
onsemi

NTD5867NLT4G

MFR #NTD5867NLT4G

FPN#NTD5867NLT4G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel Single 60V 20A (Tc) Surface Mount, TO-252-3
Datasheet
56611-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTD5867NL
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance675pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current20A (Tc)
Maximum Drain to Source Resistance39 mOhm @ 10A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation36W (Tc)
Maximum Pulse Drain Current76A
Maximum Total Gate Charge15nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeDPAK (SINGLE GAUGE)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.3nC
Typical Gate to Source Charge2.2nC