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NTD5865NLT4G

NTD5865NLT4G

MFR #NTD5865NLT4G

FPN#NTD5865NLT4G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 46A(Tc) 71W(Tc) Surface Mount, TO-252-3
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTD5865NL
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1400pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current46A (Tc)
Maximum Drain to Source Resistance16 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation71W (Tc)
Maximum Pulse Drain Current203A
Maximum Total Gate Charge29nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeDPAK (SINGLE GAUGE)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8nC
Typical Gate to Source Charge4nC