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NTD4979N-35G
onsemi

NTD4979N-35G

MFR #NTD4979N-35G

FPN#NTD4979N-35G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 9.4A (Ta) 41A (Tc) 1.38W (Ta) 26.3W (Tc) Through Hole, TO-251-3
Datasheet
56609-Datasheet
Quote Onlymore info
Multiples of: 75more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTD4979N
Packaging TypeRail
Packaging Quantity75
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance837pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current9.4A (Ta), 41A (Tc)
Maximum Drain to Source Resistance9 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation1.38W (Ta), 26.3W (Tc)
Maximum Pulse Drain Current150A
Maximum Total Gate Charge16.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeI-Pak
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.8nC
Typical Gate to Source Charge2.8nC