(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NTD4815N-35G
onsemi

NTD4815N-35G

MFR #NTD4815N-35G

FPN#NTD4815N-35G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel Single 30V 6.9A (Ta), 35A (Tc) Through Hole, TO-252-3
Datasheet
56602-Datasheet
Quote Onlymore info
Multiples of: 75more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTD4815N
Packaging TypeTube
Packaging Quantity75
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 11.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance770pF
Input Capacitance Test Voltage12V
Life Cycle StatusObsolete
Maximum Continuous Drain Current6.9A (Ta), 35A (Tc)
Maximum Drain to Source Resistance15 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation1.26W (Ta), 32.6W (Tc)
Maximum Pulse Drain Current87A
Maximum Total Gate Charge14.1nC
Maximum Total Gate Charge Test Voltage11.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeI-Pak
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.1nC
Typical Gate to Source Charge3.1nC