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NTD360N65S3H
onsemi

NTD360N65S3H

MFR #NTD360N65S3H

FPN#NTD360N65S3H-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount, TO-252-3
Datasheet
137011-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTD360N65S3H
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance916pF
Input Capacitance Test Voltage400V
Life Cycle StatusActive
Maximum Continuous Drain Current10A (Tc)
Maximum Drain to Source Resistance360 mOhm @ 5A, 10V
Maximum Gate to Source Threshold Voltage4V @ 700µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation83W (Tc)
Maximum Pulse Drain Current28A
Maximum Total Gate Charge17.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5nC
Typical Gate to Source Charge4.3nC