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NTD3055L104-1G
onsemi

NTD3055L104-1G

MFR #NTD3055L104-1G

FPN#NTD3055L104-1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60 V 12A (Ta) 1.5W (Ta), 48W (Tj) Through Hole I-PAK
Datasheet
56599-Datasheet
Quote Onlymore info
Multiples of: 75more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTD3055L104
Packaging TypeTube
Packaging Quantity75
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Package TypeI-Pak
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±15V
Input Capacitance440pF
Input Capacitance Test Voltage25V
Maximum Continuous Drain Current12A (Ta)
Maximum Drain to Source Resistance104 mOhm @ 6A, 5V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation1.5W (Ta)
Maximum Pulse Drain Current45A
Maximum Total Gate Charge20nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A