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NTD25P03LT4G
MFR #NTD25P03LT4G
FPN#NTD25P03LT4G-FL
MFRonsemi
Part DescriptionP-Channel 30 V 25A (Ta) 75W (Tj) Surface Mount DPAK
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTD25P03L |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4V, 5V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±15V |
| Input Capacitance | 1260pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 25A (Ta) |
| Maximum Drain to Source Resistance | 80 mOhm @ 25A, 5V |
| Maximum Gate to Source Threshold Voltage | 2V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 75W (Ta) |
| Maximum Pulse Drain Current | 75A |
| Maximum Total Gate Charge | 20nC |
| Maximum Total Gate Charge Test Voltage | 5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | N/A |
| Typical Gate to Source Charge | N/A |
