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NTCR013N120M3S
onsemi

NTCR013N120M3S

MFR #NTCR013N120M3S

FPN#NTCR013N120M3S-FL

MFRonsemi

Part DescriptionWAFER DIE
Datasheet
165181-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTCR013N120M3S
Lifecycle StatusActive
ROHSNot Required
RoHs Exemption TypeRoHS (2015/863)
Reach StatusCompliant
Package TypeDie
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage1.2kV
Drive Voltage18V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source VoltageN/A
Input Capacitance5813pF
Input Capacitance Test Voltage800V
Maximum Continuous Drain CurrentN/A
Maximum Drain to Source Resistance20 mOhm @ 75A, 18V
Maximum Gate to Source Threshold Voltage4.4V @ 37mA
Maximum Junction TemperatureN/A
Maximum Power DissipationN/A
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge254nC
Maximum Total Gate Charge Test Voltage18V
Minimum Junction TemperatureN/A
TechnologySiC (Silicon Carbide Junction Transistor)
Typical Gate to Drain Charge61nC
Typical Gate to Source Charge46nC