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NTBS9D0N10MC
onsemi

NTBS9D0N10MC

MFR #NTBS9D0N10MC

FPN#NTBS9D0N10MC-FL

MFRonsemi

Part DescriptionN-Channel 100 V 14A (Ta), 60A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D²PAK-3 (TO-263-3)
Datasheet
56589-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTBS9D0N10MC
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1695pF
Input Capacitance Test Voltage50V
Life Cycle StatusActive
Maximum Continuous Drain Current14A (Ta), 60A (Tc)
Maximum Drain to Source Resistance9 mOhm @ 23A, 10V
Maximum Gate to Source Threshold Voltage4V @ 131µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 68W (Tc)
Maximum Pulse Drain Current239A
Maximum Total Gate Charge23nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5nC
Typical Gate to Source Charge8nC