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NTBS2D7N06M7
onsemi

NTBS2D7N06M7

MFR #NTBS2D7N06M7

FPN#NTBS2D7N06M7-FL

MFRonsemi

Part DescriptionN-Channel 60 V 110A (Tc) 176W (Tj) Surface Mount DPAK-3 (TO-263-3)
Datasheet
56588-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTBS2D7N06M7
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusLast Time Buy
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance6655pF
Input Capacitance Test Voltage30V
Life Cycle StatusLast Time Buy
Maximum Continuous Drain Current110A (Tc)
Maximum Drain to Source Resistance2.7 mOhm @ 80A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation176W (Tj)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge110nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeD2PAK-3 (TO-263)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge10nC
Typical Gate to Source Charge35nC