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NTBLS1D1N08H
onsemi

NTBLS1D1N08H

MFR #NTBLS1D1N08H

FPN#NTBLS1D1N08H-FL

MFRonsemi

Part DescriptionMOSFET N-CH 80V 41A/351A 8HPSOF
Datasheet
96687-Datasheet
Quote Onlymore info
Multiples of: 2000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTBLS1D1N08H
Packaging TypeTape and Reel
Packaging Quantity2000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type8-HPSOF
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance11200pF
Input Capacitance Test Voltage40V
Maximum Continuous Drain Current41A (Ta), 351A (Tc)
Maximum Drain to Source Resistance1.05 mOhm @ 50A, 10V
Maximum Gate to Source Threshold Voltage4V @ 650µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation4.2W (Ta), 311W (Tc)
Maximum Pulse Drain Current900A
Maximum Total Gate Charge166nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge35nC
Typical Gate to Source Charge44nC