(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NTBGS1D5N06C
onsemi

NTBGS1D5N06C

MFR #NTBGS1D5N06C

FPN#NTBGS1D5N06C-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 35A(Ta) 267A(Tc) Surface Mount, TO-263-7
Datasheet
122089-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTBGS1D5N06C
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage10V, 12V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance6250pF
Input Capacitance Test Voltage30V
Life Cycle StatusActive
Maximum Continuous Drain Current35A (Ta), 267A (Tc)
Maximum Drain to Source Resistance1.55 mOhm @ 64A, 12V
Maximum Gate to Source Threshold Voltage4V @ 318µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation3.7W (Ta), 211W (Tc)
Maximum Pulse Drain Current1.133kA
Maximum Total Gate Charge78.6nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeD2PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge12.2nC
Typical Gate to Source Charge27.3nC