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NTBGS1D5N06C
onsemi

NTBGS1D5N06C

MFR #NTBGS1D5N06C

FPN#NTBGS1D5N06C-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 35A(Ta) 267A(Tc) Surface Mount, TO-263-7
Datasheet
122089-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTBGS1D5N06C
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage10V, 12V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance6250pF
Input Capacitance Test Voltage30V
Life Cycle StatusActive
Maximum Continuous Drain Current35A (Ta), 267A (Tc)
Maximum Drain to Source Resistance1.55 mOhm @ 64A, 12V
Maximum Gate to Source Threshold Voltage4V @ 318µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.7W (Ta), 211W (Tc)
Maximum Pulse Drain Current1.133kA
Maximum Total Gate Charge78.6nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeD2PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge12.2nC
Typical Gate to Source Charge27.3nC