onsemi
NTBG060N065SC1
MFR #NTBG060N065SC1
FPN#NTBG060N065SC1-FL
MFRonsemi
Part DescriptionSILICON CARBIDE (SIC) MOSFET - 4
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTBG060N065SC1 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 800 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Package Type | D2PAK-7 |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 650V |
| Drive Voltage | 15V, 18V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | +22V, -8V |
| Input Capacitance | 1473pF |
| Input Capacitance Test Voltage | 325V |
| Maximum Continuous Drain Current | 46A (Tc) |
| Maximum Drain to Source Resistance | 70 mOhm @ 20A, 10V |
| Maximum Gate to Source Threshold Voltage | 4.3V @ 6.5mA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 170W (Tc) |
| Maximum Pulse Drain Current | 130A |
| Maximum Total Gate Charge | 74nC |
| Maximum Total Gate Charge Test Voltage | 18V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Typical Gate to Drain Charge | 23nC |
| Typical Gate to Source Charge | 20nC |