NTBG040N120M3S
MFR #NTBG040N120M3S
FPN#NTBG040N120M3S-FL
MFRonsemi
Part DescriptionSILICON CARBIDE (SIC) MOSFET - E
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTBG040N120M3S |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 800 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 1.2kV |
| Drive Voltage | 18V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | +22V, -10V |
| Input Capacitance | 1700pF |
| Input Capacitance Test Voltage | 800V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 57A (Tc) |
| Maximum Drain to Source Resistance | 54 mOhm @ 20A, 18V |
| Maximum Gate to Source Threshold Voltage | 4.4V @ 10mA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 263W (Tc) |
| Maximum Pulse Drain Current | 149A |
| Maximum Total Gate Charge | 75nC |
| Maximum Total Gate Charge Test Voltage | 18V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | D2PAK-7 |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Typical Gate to Drain Charge | 22nC |
| Typical Gate to Source Charge | 14nC |