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onsemi

NTBG025N065SC1

MFR #NTBG025N065SC1

FPN#NTBG025N065SC1-FL

MFRonsemi

Part DescriptionSILICON CARBIDE (SIC) MOSFET - 1
Datasheet
145224-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTBG025N065SC1
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeD2PAK-7
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage650V
Drive Voltage15V, 18V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage+22V, -8V
Input Capacitance3480pF
Input Capacitance Test Voltage325V
Maximum Continuous Drain Current106A (Tc)
Maximum Drain to Source Resistance28.5 mOhm @ 45A, 18V
Maximum Gate to Source Threshold Voltage4.3V @ 15.5mA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation395W (Tc)
Maximum Pulse Drain Current284A
Maximum Total Gate Charge164nC
Maximum Total Gate Charge Test Voltage18V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologySiC (Silicon Carbide Junction Transistor)
Typical Gate to Drain Charge48nC
Typical Gate to Source Charge48nC