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NTB6413ANT4G
MFR #NTB6413ANT4G
FPN#NTB6413ANT4G-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 100V 42A (Tc) TO-263-3 T/R
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTB6413AN |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 800 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 100V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 1800pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 42A (Tc) |
| Maximum Drain to Source Resistance | 28 mOhm @ 42A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 136W (Tc) |
| Maximum Pulse Drain Current | 178A |
| Maximum Total Gate Charge | 51nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | D2PAK-3 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 26nC |
| Typical Gate to Source Charge | 10nC |