(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
NTB60N06T4G
onsemi

NTB60N06T4G

MFR #NTB60N06T4G

FPN#NTB60N06T4G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 60A(Ta) 2.4W(Ta) 150W(Tj) Surface Mount, TO-263-3
Datasheet
100334-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTB60N06
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance3220pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current60A (Ta)
Maximum Drain to Source Resistance14 mOhm @ 30A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation2.4W (Ta), 150W (Tj)
Maximum Pulse Drain Current180A
Maximum Total Gate Charge81nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeD2PAK-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A