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NTB5605PT4G
onsemi

NTB5605PT4G

MFR #NTB5605PT4G

FPN#NTB5605PT4G-FL

MFRonsemi

Part DescriptionP-Channel 60 V 18.5A (Ta) 88W (Tc) Surface Mount D²PAK
Datasheet
56583-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTB5605P
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1190pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current18.5A (Ta)
Maximum Drain to Source Resistance140 mOhm @ 8.5A, 5V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation88W (Tc)
Maximum Pulse Drain Current55A
Maximum Total Gate Charge22nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Package TypeD2PAK-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7nC
Typical Gate to Source Charge4nC