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NTB5605PT4G
onsemi

NTB5605PT4G

MFR #NTB5605PT4G

FPN#NTB5605PT4G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 60V 18.5A(Ta) 88W(Tc) Surface Mount, TO-263-3
Datasheet
56583-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTB5605P
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1190pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current18.5A (Ta)
Maximum Drain to Source Resistance140 mOhm @ 8.5A, 5V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation88W (Tc)
Maximum Pulse Drain Current55A
Maximum Total Gate Charge22nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeD2PAK-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7nC
Typical Gate to Source Charge4nC