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NTB5405NT4G
MFR #NTB5405NT4G
FPN#NTB5405NT4G-FL
MFRonsemi
Part DescriptionN-Channel 40 V 116A (Tc) 3W (Ta), 150W (Tc) Surface Mount DPAK
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NTB5405N |
Packaging Type | Tape and Reel |
Packaging Quantity | 800 |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 40V |
Drive Voltage | 5V, 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 4000pF |
Input Capacitance Test Voltage | 32V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 16.5A (Ta), 116A (Tc) |
Maximum Drain to Source Resistance | 5.8 mOhm @ 40A, 10V |
Maximum Gate to Source Threshold Voltage | 3.5V @ 250µA |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 3W (Ta), 150W (Tc) |
Maximum Pulse Drain Current | 280A |
Maximum Total Gate Charge | 88nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | D2PAK-3 |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 37nC |
Typical Gate to Source Charge | 37nC |