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NTB5405NT4G
onsemi

NTB5405NT4G

MFR #NTB5405NT4G

FPN#NTB5405NT4G-FL

MFRonsemi

Part DescriptionN-Channel 40 V 116A (Tc) 3W (Ta), 150W (Tc) Surface Mount DPAK
Datasheet
56582-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTB5405N
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage40V
Drive Voltage5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance4000pF
Input Capacitance Test Voltage32V
Life Cycle StatusObsolete
Maximum Continuous Drain Current16.5A (Ta), 116A (Tc)
Maximum Drain to Source Resistance5.8 mOhm @ 40A, 10V
Maximum Gate to Source Threshold Voltage3.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3W (Ta), 150W (Tc)
Maximum Pulse Drain Current280A
Maximum Total Gate Charge88nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeD2PAK-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge37nC
Typical Gate to Source Charge37nC