onsemi
NTA4153NT1G
MFR #NTA4153NT1G
FPN#NTA4153NT1G-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 20V 915mA (Ta) SOT-523 T/R
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NTA4153N |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 20V |
| Drive Voltage | 1.5V, 4.5V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±6V |
| Input Capacitance | 110pF |
| Input Capacitance Test Voltage | 16V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 915mA (Ta) |
| Maximum Drain to Source Resistance | 230 mOhm @ 600mA, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.1V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 300mW (Tj) |
| Maximum Pulse Drain Current | 1.3A |
| Maximum Total Gate Charge | 1.82nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| PK Package Dimensions Note | Popular package size 86% from Suppliers use this Dimension |
| Package Type | SC-75, SOT-416 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 420pC |
| Typical Gate to Source Charge | 300pC |