(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

NSVTB60BDW1T1G

MFR #NSVTB60BDW1T1G

FPN#NSVTB60BDW1T1G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 150mA 250mW Surface Mount SC-88/SC70-6/SOT-363
Datasheet
56570-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNSTB60BDW1
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Base Resistance - R122 kOhm
Configuration1 NPN - Pre-Biased, 1 PNP
Emitter Base Resistance - R247 kOhm
Gain Bandwidth140MHz
Life Cycle StatusActive
Maximum Collector Base Voltage50V
Maximum Collector Current150mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage500mV @ 5mA, 50mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base Voltage50V, 60V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation250mW
Minimum DC Current Gain80 @ 5mA, 10V, 120 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 65% from Suppliers use this Dimension
Package TypeSC-88/SC70-6/SOT-363
Resistor Ratio R1 R22.1
Technology TypeN/A
Transistor TypeArray