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onsemi

NSVMUN531335DW1T3G

MFR #NSVMUN531335DW1T3G

FPN#NSVMUN531335DW1T3G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 385mW Surface Mount SC-88/SC70-6/SOT-363
Datasheet
56551-Datasheet
Quote Onlymore info
Multiples of: 10000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMUN531335DW1
Packaging TypeTape and Reel
Packaging Quantity10000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Base Resistance - R12.2 kOhm, 47 kOhm
Configuration1 NPN, 1 PNP - Pre-Biased
Emitter Base Resistance - R247 kOhm
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage250mV @ 300µA, 10mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base VoltageN/A
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation385mW
Minimum DC Current Gain80 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
PK Package Dimensions NotePopular package size 65% from Suppliers use this Dimension
Package TypeSC-88/SC70-6/SOT-363
Resistor Ratio R1 R20.047, 1
Technology TypeN/A
Transistor TypeArray