(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

NSVMUN531335DW1T3G

MFR #NSVMUN531335DW1T3G

FPN#NSVMUN531335DW1T3G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 385mW Surface Mount SC-88/SC70-6/SOT-363
Datasheet
56551-Datasheet
Quote Onlymore info
Multiples of: 10000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMUN531335DW1
Packaging TypeTape and Reel
Packaging Quantity10000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Base Resistance - R12.2 kOhm, 47 kOhm
Configuration1 NPN, 1 PNP - Pre-Biased
Emitter Base Resistance - R247 kOhm
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage250mV @ 300µA, 10mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base VoltageN/A
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation385mW
Minimum DC Current Gain80 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 65% from Suppliers use this Dimension
Package TypeSC-88/SC70-6/SOT-363
Resistor Ratio R1 R20.047, 1
Technology TypeN/A
Transistor TypeArray