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NSVMMBT5550LT1G
onsemi

NSVMMBT5550LT1G

MFR #NSVMMBT5550LT1G

FPN#NSVMMBT5550LT1G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 202 mW Surface Mount SC-70-3 (SOT323)
Datasheet
95954-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNSVMMBT5550LT1G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
ConfigurationNPN
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Current600mA
Maximum Collector Emitter Breakdown Voltage140V
Maximum Collector Emitter Saturation Voltage250mV @ 5mA, 50mA
Maximum Cutoff Collector Current100nA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation225mW
Minimum DC Current Gain60 @ 10mA, 5V
Minimum Operating Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
Technology TypeSI
Transistor TypeSingle