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NSV1C300ET4G
onsemi

NSV1C300ET4G

MFR #NSV1C300ET4G

FPN#NSV1C300ET4G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 100V 3A 100MHz 2.1W Surface Mount, TO-252-3
Datasheet
56440-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNSV1C300ET4G
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationPNP
Gain Bandwidth100MHz
Life Cycle StatusActive
Maximum Collector Current3A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage400mV @ 300mA, 3A
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation2.1W
Minimum DC Current Gain120 @ 1A, 2V
Minimum Operating Temperature-65°C (TJ)
Package TypeDPAK
Technology TypeN/A
Transistor TypeSingle