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NSV1C201LT1G
onsemi

NSV1C201LT1G

MFR #NSV1C201LT1G

FPN#NSV1C201LT1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 100V 2A 110MHz 490mW Surface Mount, TO-236-3
Datasheet
96992-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNSV1C201L
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Package TypeSOT-23-3 (TO-236)
ConfigurationNPN
Gain Bandwidth110MHz
Maximum Collector Current2A
Maximum Collector Emitter Breakdown Voltage100V
Maximum Collector Emitter Saturation Voltage150mV @ 200mA, 2A
Maximum Cutoff Collector Current100nA (ICBO)
Maximum DC Current Gain360 @ 500mA, 2V
Maximum Junction Temperature150°C
Maximum Operating TemperatureN/A
Maximum Power Dissipation490mW
Minimum DC Current Gain150 @ 10mA, 2V
Minimum Junction Temperature-55°C
Minimum Operating TemperatureN/A
Technology TypeSI
Transistor TypeSingle