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onsemi

NSTB60BDW1T1G

MFR #NSTB60BDW1T1G

FPN#NSTB60BDW1T1G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) NPN/PNP 50V 150mA 140MHz 250mW Surface Mount, 6-SSOP
Datasheet
56438-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNSTB60BDW1
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Base Resistance - R122 kOhm
Configuration1 NPN - Pre-Biased, 1 PNP
Emitter Base Resistance - R247 kOhm
Gain Bandwidth140MHz
Life Cycle StatusActive
Maximum Collector Base Voltage50V
Maximum Collector Current150mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage500mV @ 5mA, 50mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base Voltage50V, 60V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation250mW
Minimum DC Current Gain80 @ 5mA, 10V, 120 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 65% from Suppliers use this Dimension
Package TypeSC-88/SC70-6/SOT-363
Resistor Ratio R1 R22.1
Technology TypeN/A
Transistor TypeArray