NSS20101JT1G
MFR #NSS20101JT1G
FPN#NSS20101JT1G-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN 20 V 1 A 350MHz 300 mW Surface Mount SC-89-3
Datasheet
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NSS20101J |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Configuration | NPN |
| Gain Bandwidth | 350MHz |
| Life Cycle Status | Last Time Buy |
| Maximum Collector Current | 1A |
| Maximum Collector Emitter Breakdown Voltage | 20V |
| Maximum Collector Emitter Saturation Voltage | 220mV @ 100mA, 1A |
| Maximum Cutoff Collector Current | 100nA |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 300mW |
| Minimum DC Current Gain | 200 @ 100mA, 2V |
| Minimum Operating Temperature | -55°C (TJ) |
| PK Package Dimensions Note | Popular package size 50% from Suppliers use this Dimension |
| Package Type | SC-89-3 |
| Technology Type | SI |
| Transistor Type | Single |