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onsemi

NSS20101JT1G

MFR #NSS20101JT1G

FPN#NSS20101JT1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 20 V 1 A 350MHz 300 mW Surface Mount SC-89-3
Datasheet
56405-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNSS20101J
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusLast Time Buy
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
ConfigurationNPN
Gain Bandwidth350MHz
Life Cycle StatusLast Time Buy
Maximum Collector Current1A
Maximum Collector Emitter Breakdown Voltage20V
Maximum Collector Emitter Saturation Voltage220mV @ 100mA, 1A
Maximum Cutoff Collector Current100nA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation300mW
Minimum DC Current Gain200 @ 100mA, 2V
Minimum Operating Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 50% from Suppliers use this Dimension
Package TypeSC-89-3
Technology TypeSI
Transistor TypeSingle