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NSBC123TDP6T5G
onsemi

NSBC123TDP6T5G

MFR #NSBC123TDP6T5G

FPN#NSBC123TDP6T5G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased (Dual) 50V 100mA 339mW Surface Mount, SOT-963
Datasheet
56303-Datasheet
Quote Onlymore info
Multiples of: 8000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNSBC123TDP6
Packaging TypeTape and Reel
Packaging Quantity8000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Base Resistance - R12.2 kOhm
Configuration2 NPN - Pre-Biased
Emitter Base Resistance - R2N/A
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage250mV @ 300µA, 10mA
Maximum Cutoff Collector Current500nA
Maximum Emitter Base VoltageN/A
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation339mW
Minimum DC Current Gain160 @ 5mA, 10V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-963
Resistor Ratio R1 R2N/A
Technology TypeN/A
Transistor TypeArray