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NSB9435T1G
onsemi

NSB9435T1G

MFR #NSB9435T1G

FPN#NSB9435T1G-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 30 V 3 A 110 MHz 720 mW Surface Mount SOT-223 (TO-261)
Datasheet
56266-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNSB9435T1G
Packaging TypeTape and Reel
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Base Resistance - R110 kOhm
ConfigurationPNP - Pre-Biased
Emitter Base Resistance - R2N/A
Gain Bandwidth110MHz
Life Cycle StatusObsolete
Maximum Collector Base Voltage50V
Maximum Collector Current3A
Maximum Collector Emitter Breakdown Voltage30V
Maximum Collector Emitter Saturation Voltage550mV @ 300mA, 3A
Maximum Cutoff Collector CurrentN/A
Maximum Emitter Base VoltageN/A
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation720mW
Minimum DC Current Gain125 @ 800mA, 1V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-223 (TO-261)
Resistor Ratio R1 R2N/A
Technology TypeSI
Transistor TypeSingle