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NMLU1210TWG
MFR #NMLU1210TWG
FPN#NMLU1210TWG-FL
MFRonsemi
Part DescriptionMOSFET 2 N-Channel 2.2V 4A 8-SON T/R
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NMLU1210 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 2.2V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Standard |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 476pF |
| Input Capacitance Test Voltage | N/A |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 4A |
| Maximum Drain to Source Resistance | 26 mOhm @ 3.2A, 10V |
| Maximum Gate to Source Threshold Voltage | 2.2V @ 250µA |
| Maximum Junction Temperature | 125°C |
| Maximum Power Dissipation | 1.2W |
| Maximum Pulse Drain Current | N/A |
| Maximum Total Gate Charge | N/A |
| Maximum Total Gate Charge Test Voltage | N/A |
| Minimum Junction Temperature | -55°C |
| Package Type | 8-UDFN (4x4) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | N/A |
| Typical Gate to Source Charge | N/A |
