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NJW44H11G
onsemi

NJW44H11G

MFR #NJW44H11G

FPN#NJW44H11G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 80 V 10 A 85MHz 120 W Through Hole TO-3P-3L
Datasheet
55727-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNJW44H11G
Packaging TypeTube
Packaging Quantity30
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth85MHz
Life Cycle StatusActive
Maximum Collector Current10A
Maximum Collector Emitter Breakdown Voltage80V
Maximum Collector Emitter Saturation Voltage1V @ 400mA, 8A
Maximum Cutoff Collector Current10µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation120W
Minimum DC Current Gain100 @ 2A, 2V
Minimum Operating Temperature-65°C (TJ)
PK Package Dimensions NotePopular package size 33% from Suppliers use this Dimension
Package TypeTO-3P
Technology TypeSI
Transistor TypeSingle