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NJVNJD35N04G
onsemi

NJVNJD35N04G

MFR #NJVNJD35N04G

FPN#NJVNJD35N04G-FL

MFRonsemi

Part DescriptionPower Bipolar Transistor, 4A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Datasheet
100294-Datasheet
Quote Onlymore info
Multiples of: 75more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNJVNJD35N04G
Packaging TypeTube
Packaging Quantity75
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationNPN - Darlington
Gain Bandwidth90MHz
Life Cycle StatusObsolete
Maximum Collector Base Voltage700V
Maximum Collector Current4A
Maximum Collector Emitter Breakdown Voltage350V
Maximum Collector Emitter Saturation Voltage1.5V @ 20mA, 2A
Maximum Cutoff Collector Current50µA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation45W
Minimum DC Current Gain2000 @ 2A, 2V
Minimum Operating Temperature-65°C (TJ)
Package TypeDPAK
Technology TypeN/A
Transistor TypeSingle