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NJVMJD6039T4G
onsemi

NJVMJD6039T4G

MFR #NJVMJD6039T4G

FPN#NJVMJD6039T4G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN - Darlington 80 V 4 A - 1.75 W Surface Mount DPAK
Datasheet
55724-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNJVMJD6039T4G
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN - Darlington
Gain BandwidthN/A
Life Cycle StatusActive
Maximum Collector Base Voltage80V
Maximum Collector Current4A
Maximum Collector Emitter Breakdown Voltage80V
Maximum Collector Emitter Saturation Voltage2.5V @ 8mA, 2A
Maximum Cutoff Collector Current10µA
Maximum Emitter Base Voltage5V
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.75W
Minimum DC Current Gain500 @ 2A, 4V
Minimum Operating Temperature-65°C (TJ)
Package TypeDPAK
Technology TypeSI
Transistor TypeSingle