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onsemi

NJVMJD45H11D3T4G

MFR #NJVMJD45H11D3T4G

FPN#NJVMJD45H11D3T4G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 80 V 8 A 90MHz 20 W Surface Mount DPAK
Datasheet
55721-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJD45H11
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationPNP
Gain Bandwidth90MHz
Life Cycle StatusObsolete
Maximum Collector Current8A
Maximum Collector Emitter Breakdown Voltage80V
Maximum Collector Emitter Saturation Voltage1V @ 400mA, 8A
Maximum Cutoff Collector Current1µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.75W
Minimum DC Current Gain60 @ 2A, 1V
Minimum Operating Temperature-55°C (TJ)
Package TypeDPAK-3
Technology TypeSI
Transistor TypeSingle