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NJVMJD44H11G
onsemi

NJVMJD44H11G

MFR #NJVMJD44H11G

FPN#NJVMJD44H11G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 80 V 8 A 85MHz 1.75 W Surface Mount DPAK
Datasheet
55719-Datasheet
Quote Onlymore info
Multiples of: 75more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJD44H11
Packaging TypeTube
Packaging Quantity75
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth85MHz
Life Cycle StatusActive
Maximum Collector Current8A
Maximum Collector Emitter Breakdown Voltage80V
Maximum Collector Emitter Saturation Voltage1V @ 400mA, 8A
Maximum Cutoff Collector Current1µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.75W
Minimum DC Current Gain60 @ 2A, 1V
Minimum Operating Temperature-55°C (TJ)
Package TypeDPAK
Technology TypeSI
Transistor TypeSingle