_medium_204x204px.png)
NJVMJD350T4G
MFR #NJVMJD350T4G
FPN#NJVMJD350T4G-FL
MFRonsemi
Part DescriptionPower Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | MJD350 | 
| Packaging Type | Tape and Reel | 
| Packaging Quantity | 2500 | 
| Lifecycle Status | Active | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| ROHS China | Not Compliant | 
| Reach Status | Not Compliant | 
| Configuration | PNP | 
| Gain Bandwidth | 10MHz | 
| Life Cycle Status | Active | 
| Maximum Collector Current | 500mA | 
| Maximum Collector Emitter Breakdown Voltage | 300V | 
| Maximum Collector Emitter Saturation Voltage | 1V @ 10mA, 100mA | 
| Maximum Cutoff Collector Current | 100µA | 
| Maximum Operating Temperature | 150°C (TJ) | 
| Maximum Power Dissipation | 1.56W | 
| Minimum DC Current Gain | 30 @ 50mA, 10V | 
| Minimum Operating Temperature | -65°C (TJ) | 
| Package Type | DPAK | 
| Technology Type | SI | 
| Transistor Type | Single | 
