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NJVMJD350T4G
MFR #NJVMJD350T4G
FPN#NJVMJD350T4G-FL
MFRonsemi
Part DescriptionPower Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | MJD350 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Configuration | PNP |
| Gain Bandwidth | 10MHz |
| Life Cycle Status | Active |
| Maximum Collector Current | 500mA |
| Maximum Collector Emitter Breakdown Voltage | 300V |
| Maximum Collector Emitter Saturation Voltage | 1V @ 10mA, 100mA |
| Maximum Cutoff Collector Current | 100µA |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 1.56W |
| Minimum DC Current Gain | 30 @ 50mA, 10V |
| Minimum Operating Temperature | -65°C (TJ) |
| Package Type | DPAK |
| Technology Type | SI |
| Transistor Type | Single |
