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NJVMJD350T4G
onsemi

NJVMJD350T4G

MFR #NJVMJD350T4G

FPN#NJVMJD350T4G-FL

MFRonsemi

Part DescriptionPower Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Datasheet
166408-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJD350
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Package TypeDPAK
ConfigurationPNP
Gain Bandwidth10MHz
Maximum Collector Current500mA
Maximum Collector Emitter Breakdown Voltage300V
Maximum Collector Emitter Saturation Voltage1V @ 10mA, 100mA
Maximum Cutoff Collector Current100µA
Maximum DC Current Gain240 @ 50mA, 10V
Maximum Junction Temperature150°C
Maximum Operating TemperatureN/A
Maximum Power Dissipation1.56W
Minimum DC Current Gain30 @ 50mA, 10V
Minimum Junction Temperature-65°C
Minimum Operating TemperatureN/A
Technology TypeSI
Transistor TypeSingle