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NJVMJD32CG
MFR #NJVMJD32CG
FPN#NJVMJD32CG-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 100 V 3 A 3MHz 1.56 W Surface Mount DPAK
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | MJD32C |
Packaging Type | Tube |
Packaging Quantity | 75 |
Lifecycle Status | Active |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Configuration | PNP |
Gain Bandwidth | 3MHz |
Life Cycle Status | Active |
Maximum Collector Current | 3A |
Maximum Collector Emitter Breakdown Voltage | 100V |
Maximum Collector Emitter Saturation Voltage | 1.2V @ 375mA, 3A |
Maximum Cutoff Collector Current | 50µA |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 1.56W |
Minimum DC Current Gain | 25 @ 1A, 4V |
Minimum Operating Temperature | -65°C (TJ) |
Package Type | DPAK |
Technology Type | SI |
Transistor Type | Single |