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NJVMJD3055T4G

NJVMJD3055T4G

MFR #NJVMJD3055T4G

FPN#NJVMJD3055T4G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 60 V 10 A 2MHz 1.75 W Surface Mount DPAK
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameMJD3055
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth2MHz
Life Cycle StatusActive
Maximum Collector Current10A
Maximum Collector Emitter Breakdown Voltage60V
Maximum Collector Emitter Saturation Voltage8V @ 3.3A, 10A
Maximum Cutoff Collector Current50µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation1.75W
Minimum DC Current Gain20 @ 4A, 4V
Minimum Operating Temperature-55°C (TJ)
Package TypeDPAK
Technology TypeSI
Transistor TypeSingle