onsemi
NGTG12N60TF1G
MFR #NGTG12N60TF1G
FPN#NGTG12N60TF1G-FL
MFRonsemi
Part DescriptionInsulated-Gate Bipolar Transistor (IGBT) Single 600V 24A 54W Through Hole, TO-3PF-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NGTG12N60TF1G |
| Packaging Type | Tube |
| Packaging Quantity | 30 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Configuration | Single |
| Gate Charge | 84nC |
| IGBT Type | N/A |
| Input Type | Standard |
| Life Cycle Status | Obsolete |
| Maximum Collector Current | 24A |
| Maximum Collector Emitter Breakdown Voltage | 600V |
| Maximum Collector Emitter Saturation Voltage | 1.6V @ 15V, 12A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 54W |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Minimum Switching Frequency | N/A |
| Package Type | TO-3PF-3 |
| Pulsed Collector Current | 88A |
| Reverse Recovery Time | N/A |
| Switching Off Delay Time | 200ns |
| Switching Off Energy | N/A |
| Switching On Delay Time | 55ns |
| Switching On Energy | N/A |
| Technology Type | SI |