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NGTG12N60TF1G
onsemi

NGTG12N60TF1G

MFR #NGTG12N60TF1G

FPN#NGTG12N60TF1G-FL

MFRonsemi

Part DescriptionInsulated-Gate Bipolar Transistor (IGBT) Single 600V 24A 54W Through Hole, TO-3PF-3
Datasheet
55667-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNGTG12N60TF1G
Packaging TypeTube
Packaging Quantity30
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge84nC
IGBT TypeN/A
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current24A
Maximum Collector Emitter Breakdown Voltage600V
Maximum Collector Emitter Saturation Voltage1.6V @ 15V, 12A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation54W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Switching FrequencyN/A
Package TypeTO-3PF-3
Pulsed Collector Current88A
Reverse Recovery TimeN/A
Switching Off Delay Time200ns
Switching Off EnergyN/A
Switching On Delay Time55ns
Switching On EnergyN/A
Technology TypeSI