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NGTD13T65F2WP
onsemi

NGTD13T65F2WP

MFR #NGTD13T65F2WP

FPN#NGTD13T65F2WP-FL

MFRonsemi

Part DescriptionIGBT Trench Field Stop 650 V Surface Mount Die
Datasheet
55663-Datasheet
Quote Onlymore info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNGTD13T65F2
Packaging TypePLRNG
Packaging Quantity1
Lifecycle StatusObsolete
RoHSNot Required
RoHS Exemption TypeRoHS (2015/863)
Reach StatusCompliant
ConfigurationSingle
Gate ChargeN/A
IGBT TypeTrench Field Stop
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector CurrentN/A
Maximum Collector Emitter Breakdown Voltage650V
Maximum Collector Emitter Saturation Voltage2.2V @ 15V, 30A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature175°C (TJ)
Maximum Power DissipationN/A
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Switching FrequencyN/A
Package TypeDie
Pulsed Collector Current120A
Reverse Recovery TimeN/A
Switching Off Delay TimeN/A
Switching Off EnergyN/A
Switching On Delay TimeN/A
Switching On EnergyN/A
Technology TypeN/A