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NGTB75N65FL2WAG

MFR #NGTB75N65FL2WAG

FPN#NGTB75N65FL2WAG-FL

MFRonsemi

Part DescriptionIGBT-Single 650V 200A 536W TO247-4
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNGTB75N65FL2WAG
Packaging TypeTube
Packaging Quantity30
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
ConfigurationSingle Dual Emitter
Gate Charge310nC
IGBT TypeField Stop
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current200A
Maximum Collector Emitter Breakdown Voltage650V
Maximum Collector Emitter Saturation Voltage2V @ 15V, 75A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation536W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Switching FrequencyN/A
Package TypeTO-247-4
Pulsed Collector Current200A
Reverse Recovery Time90ns
Switching Off Delay Time157ns
Switching Off Energy1.2mJ
Switching On Delay Time23ns
Switching On Energy610µJ
Technology TypeN/A