NGTB60N65FL2WG
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NGTB60N65FL2WG |
| Packaging Type | Tube |
| Packaging Quantity | 30 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Configuration | Single |
| Gate Charge | 318nC |
| IGBT Type | Field Stop |
| Input Type | Standard |
| Life Cycle Status | Obsolete |
| Maximum Collector Current | 100A |
| Maximum Collector Emitter Breakdown Voltage | 650V |
| Maximum Collector Emitter Saturation Voltage | 2V @ 15V, 60A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 595W |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Switching Frequency | N/A |
| Package Type | TO-247 |
| Pulsed Collector Current | 240A |
| Reverse Recovery Time | 96ns |
| Switching Off Delay Time | 265ns |
| Switching Off Energy | 660µJ |
| Switching On Delay Time | 117ns |
| Switching On Energy | 1.59mJ |
| Technology Type | N/A |