
NGTB50N60FL2WG
MFR #NGTB50N60FL2WG
FPN#NGTB50N60FL2WG-FL
MFRonsemi
Part DescriptionIGBT Trench Field Stop 600V 100A 417W Through Hole, TO-247-3
Datasheet
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Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | NGTB50N60FL2WG |
Packaging Type | Tube |
Packaging Quantity | 30 |
Lifecycle Status | Obsolete |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
Reach Status | Compliant |
Configuration | Single |
Gate Charge | 220nC |
IGBT Type | Trench Field Stop |
Input Type | Standard |
Life Cycle Status | Obsolete |
Maximum Collector Current | 100A |
Maximum Collector Emitter Breakdown Voltage | 600V |
Maximum Collector Emitter Saturation Voltage | 2V @ 15V, 50A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Junction Temperature | 175°C |
Maximum Power Dissipation | 417W |
Maximum Switching Frequency | N/A |
Minimum Junction Temperature | -55°C |
Minimum Switching Frequency | N/A |
Package Type | TO-247 |
Pulsed Collector Current | 200A |
Reverse Recovery Time | 94ns |
Switching Off Delay Time | 237ns |
Switching Off Energy | 460µJ |
Switching On Delay Time | 100ns |
Switching On Energy | 1.5mJ |
Technology Type | N/A |