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NGTB40N65IHRTG
onsemi

NGTB40N65IHRTG

MFR #NGTB40N65IHRTG

FPN#NGTB40N65IHRTG-FL

MFRonsemi

Part DescriptionIGBT-Single 650V 80A 405W Through Hole, TO-3P-3
Datasheet
63803-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNGTB40N65IHRTG
Packaging TypeTube
Packaging Quantity30
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge190nC
IGBT TypeTrench Field Stop
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current80A
Maximum Collector Emitter Breakdown Voltage650V
Maximum Collector Emitter Saturation Voltage1.7V @ 15V, 40A
Maximum Gate Emitter VoltageN/A
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation405W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-40°C (TJ)
Minimum Operating TemperatureN/A
Minimum Switching FrequencyN/A
PK Package Dimensions NotePopular package size 33% from Suppliers use this Dimension
Package TypeTO-3P
Pulsed Collector Current160A
Reverse Recovery TimeN/A
Switching Off Delay Time197ns
Switching Off Energy420µJ
Switching On Delay TimeN/A
Switching On EnergyN/A
Technology TypeN/A