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NGTB40N65FL2WG
onsemi

NGTB40N65FL2WG

MFR #NGTB40N65FL2WG

FPN#NGTB40N65FL2WG-FL

MFRonsemi

Part DescriptionIGBT-Single 650V 80A 366W TO247
Datasheet
101004-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNGTB40N65FL2WG
Packaging TypeTube
Packaging Quantity30
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
ConfigurationSingle
Gate Charge170nC
IGBT TypeTrench Field Stop
Input TypeStandard
Life Cycle StatusActive
Maximum Collector Current80A
Maximum Collector Emitter Breakdown Voltage650V
Maximum Collector Emitter Saturation Voltage2V @ 15V, 40A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation366W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Switching FrequencyN/A
Package TypeTO-247
Pulsed Collector Current160A
Reverse Recovery Time72ns
Switching Delay Time84ns/177ns
Switching Energy970µJ (on), 440µJ (off)
Technology TypeN/A