NGTB35N65FL2WG
MFR #NGTB35N65FL2WG
FPN#NGTB35N65FL2WG-FL
MFRonsemi
Part DescriptionIGBT Trench Field Stop 650 V 70 A 300 W Through Hole TO-247-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NGTB35N65FL2WG |
| Packaging Type | Tube |
| Packaging Quantity | 30 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Configuration | Single |
| Gate Charge | 125nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Life Cycle Status | Active |
| Maximum Collector Current | 70A |
| Maximum Collector Emitter Breakdown Voltage | 650V |
| Maximum Collector Emitter Saturation Voltage | 2V @ 15V, 35A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 300W |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Switching Frequency | N/A |
| Package Type | TO-247 |
| Pulsed Collector Current | 120A |
| Reverse Recovery Time | 68ns |
| Switching Off Delay Time | 132ns |
| Switching Off Energy | 280µJ |
| Switching On Delay Time | 72ns |
| Switching On Energy | 840µJ |
| Technology Type | N/A |