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NGTB20N60L2TF1G
onsemi

NGTB20N60L2TF1G

MFR #NGTB20N60L2TF1G

FPN#NGTB20N60L2TF1G-FL

MFRonsemi

Part DescriptionIGBT-Single 600V 40A 64W Through Hole TO-3P-3 Tube
Datasheet
63801-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNGTB20N60L2TF1G
Packaging TypeTube
Packaging Quantity30
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge84nC
IGBT TypeN/A
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current40A
Maximum Collector Emitter Breakdown Voltage600V
Maximum Collector Emitter Saturation Voltage1.65V @ 15V, 20A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation64W
Maximum Switching FrequencyN/A
Minimum Junction TemperatureN/A
Minimum Switching FrequencyN/A
Package TypeTO-3PF-3
Pulsed Collector Current80A
Reverse Recovery Time70ns
Switching Off Delay Time193ns
Switching Off EnergyN/A
Switching On Delay Time60ns
Switching On EnergyN/A
Technology TypeSI