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NGTB15N120FL2WG
onsemi

NGTB15N120FL2WG

MFR #NGTB15N120FL2WG

FPN#NGTB15N120FL2WG-FL

MFRonsemi

Part DescriptionInsulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel
Datasheet
55645-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNGTB15N120FL2WG
Packaging TypeTube
Packaging Quantity30
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
ConfigurationSingle
Gate Charge109nC
IGBT TypeTrench Field Stop
Input TypeStandard
Life Cycle StatusActive
Maximum Collector Current30A
Maximum Collector Emitter Breakdown Voltage1.2kV
Maximum Collector Emitter Saturation Voltage2.4V @ 15V, 15A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation294W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Switching FrequencyN/A
Package TypeTO-247
Pulsed Collector Current60A
Reverse Recovery Time110ns
Switching Off Delay Time132ns
Switching Off Energy370µJ
Switching On Delay Time64ns
Switching On Energy1.2mJ
Technology TypeN/A