NGTB15N120FL2WG
MFR #NGTB15N120FL2WG
FPN#NGTB15N120FL2WG-FL
MFRonsemi
Part DescriptionInsulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NGTB15N120FL2WG |
| Packaging Type | Tube |
| Packaging Quantity | 30 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| Reach Status | Compliant |
| Configuration | Single |
| Gate Charge | 109nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Life Cycle Status | Active |
| Maximum Collector Current | 30A |
| Maximum Collector Emitter Breakdown Voltage | 1.2kV |
| Maximum Collector Emitter Saturation Voltage | 2.4V @ 15V, 15A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 294W |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Minimum Switching Frequency | N/A |
| Package Type | TO-247 |
| Pulsed Collector Current | 60A |
| Reverse Recovery Time | 110ns |
| Switching Off Delay Time | 132ns |
| Switching Off Energy | 370µJ |
| Switching On Delay Time | 64ns |
| Switching On Energy | 1.2mJ |
| Technology Type | N/A |