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NGTB10N60R2DT4G
onsemi

NGTB10N60R2DT4G

MFR #NGTB10N60R2DT4G

FPN#NGTB10N60R2DT4G-FL

MFRonsemi

Part DescriptionInsulated Gate Bipolar Transistor IGBT 600V 20A 72W Surface Mount, TO-252-3
Datasheet
55644-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNGTB10N60R2DT4G
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge53nC
IGBT TypeN/A
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current20A
Maximum Collector Emitter Breakdown Voltage600V
Maximum Collector Emitter Saturation Voltage2.1V @ 15V, 10A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation72W
Maximum Switching FrequencyN/A
Minimum Junction TemperatureN/A
Minimum Switching FrequencyN/A
Package TypeDPAK
Pulsed Collector Current40A
Reverse Recovery Time90ns
Switching Off Delay Time120ns
Switching Off Energy140µJ
Switching On Delay Time48ns
Switching On Energy412µJ
Technology TypeSI