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NGTB05N60R2DT4G
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | NGTB05N60R2DT4G |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Package Type | DPAK |
| Configuration | Single |
| Gate Charge | 30nC |
| IGBT Type | N/A |
| Input Type | Standard |
| Maximum Collector Current | 16A |
| Maximum Collector Emitter Breakdown Voltage | 600V |
| Maximum Collector Emitter Saturation Voltage | 2V @ 15V, 5A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 56W |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | N/A |
| Minimum Operating Temperature | N/A |
| Minimum Switching Frequency | N/A |
| Pulsed Collector Current | 20A |
| Reverse Recovery Time | 70ns |
| Switching Off Delay Time | 82ns |
| Switching Off Energy | 60µJ |
| Switching On Delay Time | 44ns |
| Switching On Energy | 188µJ |
| Technology Type | SI |